JAN1N5809US
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likeJAN1N5809US
Brand：Microchip
Model：JAN1N5809US
stock：1506
Store：ShenZhen/Hongkong
DataSheet：
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Price：1+
￥10.21
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| Installation type | Surface mount |
| packing | bulk |
| series | Military, MIL-PRF-19500/477 |
| Part status | On sale |
| Speed | Rapid recovery=< 500ns,> 200mA(Io) |
| working temperature | - |
| Encapsulation/Housing | SQ-MELF,B |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Supplier device packaging | B,SQ-MELF |
| Diode type | standard |
| Voltage DC reverse (Vr) (maximum) | 100 V |
| Current average rectification (Io) | 6A |
| Voltage at different If - forward (Vf) | 875 mV @ 4 A |
| Reverse recovery time (trr) | 30 ns |
| Current - reverse leakage at different Vr | 5 µA @ 100 V |
| Capacitance at different Vr and F | 60pF @ 10V,1MHz |
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